Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer
نویسندگان
چکیده
منابع مشابه
Grain boundary structures of atomic layer deposited TiN
Grain boundary plays an important role in determining the physical properties and chemical stability of the materials. In particular, the structures of grain boundaries in atomic layer deposited TiN film may be one of the main factors to dominate the reliability and performance of ULSI devices with multilayer structure of Cu-based interconnects. In this work, the characteristics of grain bounda...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2017
ISSN: 2158-3226
DOI: 10.1063/1.4977887